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| N-CHANNEL 30V - 0.0032 - 25A SO-8 STripFETTM III MOSFET FOR DC-DC CONVERSION TYPE STS25NH3LL s s s s STS25NH3LL VDSS 30 V RDS(on) <0.0035 ID 25 A TYPICAL RDS(on) = 0.0032 @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION The STS25NH3LL utilizes the latest advanced design rules of ST's propetary STripFETTM technology. This novel 0.6 process coupled to unique metalization techniques re alizes the most advanced low voltage MOSFET in SO-8 ever produced. It is therefore suit able for the most demanding DC-DC converter applications where high efficiency is to be achived at high output current. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC CONVERTERS FOR TELECOM AND NOTEBOOK CPU CORE s SYNCHRONOUS RECTIFIER ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) EAS (1) Ptot April 2003 . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Single Pulse Avalanche Energy Total Dissipation at TC = 25C Value 30 30 18 25 18 100 200 3.2 (1) Starting Tj = 25 oC Unit V V V A A A mJ W VDD = 30V (*) Pulse width limited by safe operating area. ID = 12.5A 1/8 STS25NH3LL THERMAL DATA Rthj-amb Rthj-lead Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Resistance Junction-leads Maximum Operating Junction Temperature Storage Temperature [ Max Max 47 16 -55 to 175 -55 to 175 C/W C/W C C (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 18 V Min. 30 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 12.5 A ID = 12.5 A Min. 1 0.0032 0.004 0.0035 0.005 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V ID = 12.5 A Min. Typ. 30 4450 655 50 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/8 STS25NH3LL ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 12.5 A VDD = 15 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 1) VDD=15V ID=25A VGS=4.5 V (see test circuit, Figure 2) Min. Typ. 18 50 30 12.5 10 40 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 12.5 A VDD = 15 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 75 8 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 25 A VGS = 0 32 34 2.1 Test Conditions Min. Typ. Max. 25 100 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 25 A VDD = 25 V Tj = 150C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS25NH3LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS25NH3LL Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STS25NH3LL Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STS25NH3LL SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS25NH3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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